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AS5215
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
Unless otherwise noted all in this specification defined tolerances of parameters are assured over the whole operation conditions range and also
over lifetime.
Table 3. Operating Conditions
Symbol
V DD
V SS
T_amb
Parameter
Positive Supply Voltage
Negative Supply Voltage
Ambient temperature
Condition
Min
4.5
0.0
-40
Typ
Max
5.5
0.0
150
Unit
V
V
oC
Table 4. DC/AC Characteristics for Digital Inputs and Outputs
Symbol
Parameter
Condition
Min
Typ
Max
Unit
CMOS Input
V_IH
V_IL
I_LEAK
High level Input voltage
Low level Input Voltage
Input Leakage Current
0.7 * V DD
0.3 * V DD
1
V
V
μA
CMOS Output
V_OH
V_OL
C_L
t_slew
t_delay
High level Output voltage
Low level Output Voltage
Capacitive Load
Slew Rate
Time Rise Fall
4 mA
4 mA
V DD - 0.5
V SS + 0.4
35
30
15
V
V
pF
ns
ns
CMOS Output Tristate
I_OZ
Tristate Leakage Current
1
μA
Table 5. Magnetic Input Specification
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Two pole cylindrical magnet, diametrically magnetized:
d MAG
Diameter
4
6
mm
B pp
f rot
Magnetic input field amplitude
Rotational speed
200 – 800 Gauss
Max 30000 RPM
20
0
50
80
500
mt
Hz
Table 6. Electrical System Specifications
Symbol
IDD
Parameter
Current Consumption
Condition
Max value derived at maximum I_H (Hall Bias
Current)
Min
20
Typ
Max
28
Unit
mA
Note: For single die only.
t power_on
Power up time
1.275
ms
t prop
M
V out
SF=SF 25C
- ( AP1_1/
AP2_1)
Propagation delay
Magnetic Sensitivity
Analog output range
Amplitude ratio tracking accuracy
over temperature
-40 to 150oC
1G = 0.1 mT
-40 to 150oC
18
1
Vss+
0.25
-1
22
30
6
Vdd-
0.5
+1
μs
mV/G
V
%
www.austriamicrosystems.com/AS5215
Revision 1.11
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